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2N4093 DATASHEET PDF

2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. 2N 2N JANTX. JANTXV. ABSOLUTE MAXIMUM RATINGS (TA = + C unless otherwise noted). Parameters / Test Conditions. Symbol. Value. Units. 2N datasheet, 2N circuit, 2N data sheet: MICROSEMI – N- CHANNEL J-FET Qualified per MIL-PRF/,alldatasheet, datasheet.

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The libraries are forward compatible with advances in processing capability.

Output edges are monotonic through the TTL switch point with fully populated backplanes. This process allows the ISP91 1 9 to operate at twice the speed, but one tenth the power dissipation of its datashwet counterpart. A 3 level metal option will be available soon to effectively double the usable gate count. Their high power output at nanometers proides a significant increase in system efficiency, compared to GaAs IREDs.

Junction FETs

ICL outputs will supply 1 00 mA to the base leads of the external power transistors. Most library kits include schematic capture, logic simulation, and netlist extraction. Among those items checked are device type and geometry, resistor type, geometry and value, capacitance value, and overall interconnection topology.

Wide supply range 20V to V. The weird turn pro! 22n4093

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Full text of “harris :: dataBooks :: Harris Product Selection Guide”

V v bo max. The first consists of bipolar drivers controlling an associated set of field-effect switching transistors in a multi-chip structure that provides a wide choice of parameters at low cost.

This makes it possible to model the actual structure of the active devices more accurately than when parasitic darasheet are present, and eliminates the parasitic devices as a cause of circuit malfunction.

ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, datsheet the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement.

2N4093 MOSFET. Datasheet pdf. Equivalent

Typical applications included SCR triggering, pulse and timing circuits, oscillators, sensing circuits and sweep circuits.

Your request has been submitted for approval. The AUA series is ideal for military and space applications that require radiation hardened, high performance and low-power consumption. Licensee agrees that it shall not issue any press releases containing, nor advertise, reference, reproduce, use or display, ON Semiconductor’s name or any ON Semiconductor trademark without ON Semiconductor’s express prior written consent in each instance; provided, however, that Licensee may indicate that the Licensee Product is interoperable with ON Semiconductor Products in product documentation and collateral material for the Licensee Product.

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The TAGC40K series is ideal for military and space applications that require radiation hardened, high-performance and low-power consumption. B 20 25pA 0. The FCT types vastly reduce power consumption, avoid bus contention, mini- mize switching noise, and provide outputs that are specifically tailored to interface with VME buses or their equivalents. TO 2N 25 21 5 Typ.

The CDB-series ICs incorporate the latest improvements in processing technology and plastic and ceramic packaging techniques. Package designator T indicates TO-5 package with straight leads.

Contact factory for specific requirements. ICM 1 0fiA operating current.

Conformance testing is optional and required for full compliance. Typical delay is 3. And between you and DrGonz, I’m adtasheet a little weak on the searching side. The result- ing netlist provides the basis for a customer specific 68HC05 microcomputer. Only key product information – features, ratings, or characteristics – is furnished. Anyone here have any information as to the specs for it? Protects power device from over-dissipation over-current trip Pin1.

Four connected to form 2n40933 common-anode diode pairs.